IDT03S60C 2 nd generation thinq! tm sic schottky diode features ? revolutionary semiconductor material - silicon carbide ? no reverse recovery/ no forward recovery ? temperature independent switching behavior ? high surge current capability ? qualified according to jedec 1) for target applications ? breakdown voltage tested at 5ma 2) ? optimized for high temperature operation thinq! 2g diode designed for fast switching applications like: ? ccm pfc maximum ratings, parameter symbol conditions unit continuous forward current i f t c <120 c 3a t c <70 c 4.5 rms forward current i f,rms f =50 hz 4.2 i f,sm t c =25 c, t p =10 ms 16 t c =150c, t p =10 ms 14 repetitive peak forward current i f,rm t j =150 c, t c =100 c, d =0.1 10.5 non-repetitive peak forward current i f,max t c =25 c, t p =10 s 115 i 2 t value i 2 d t t c =25 c, t p =10 ms 1.2 a 2 s t c =150c, t p =10 ms 0.96 repetitive peak reverse voltage v rrm t j =25 c 600 v diode dv/dt ruggedness d v/ d t v r = 0?.480v 50 v/ns power dissipation p tot t c =25 c 25 w operating and storage temperature t j , t stg -55 ... 175 c mounting torque m3 and m3.5 screws 60 mcm value surge non-repetitive forward current, sine halfwave v dc 600 v q c 5 nc i f 3 a product summary pg-to220-2-2 type package marking pin 1 pin 2 IDT03S60C pg-to220-2-2 d03s60c c a rev. 2.0 page 1 2007-04-25
IDT03S60C parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 5.9 k/w thermal resistance, junction - ambient r thja leaded - - 62 soldering temperature, wavesoldering only allowed at leads t sold 1.6mm (0.063 in.) from case for 10s - - 260 c electrical characteristics static characteristics dc blocking voltage v dc i r =0.05ma, t j =25c 600 - - v diode forward voltage v f i f =3 a, t j =25 c - 1.7 1.9 i f =3 a, t j =150 c - 2.1 2.6 i f =4.5 a, t j =25 c - 2.1 2.4 i f =4.5 a, t j =150 c - 2.8 3.7 reverse current i r v r =600 v, t j =25 c - 0.32 30 a v r =600 v, t j =150 c - 1.3 300 ac characteristics total capacitive charge q c -5-nc switching time 3) t c - - <10 ns c v r =1 v, f = mhz -90-pf v r =300 v, f =1 mhz -12- v r =600 v, f =1 mhz -12- values v r =400 v, i f i f,max , d i f /d t =200 a/s, t j =150 c 1) j-std20 and jesd22 4) only capacitive charge occuring, guaranteed by design. 2) all devices tested under avalanche condition, for a time periode of 5ms, at 5ma. 3) t c is the time constant for the capacitive displacement current waveform (independent from t j , i load and di/dt), different from t rr , which is dependent on t j , i load , di/dt. no reverse recovery time constant t rr due to absence of minority carrier injection. rev. 2.0 page 2 2007-04-25
IDT03S60C 1 power dissipation 2 diode forward current p tot =f( t c ) i f =f( t c ); t j 175 c parameter: r thjc(max) parameter: d=t p / t 3 typ. forward characteristic 4 typ. forward characteristic in surge current i f =f( v f ); t p =400 s mode parameter: t j i f =f( v f ); t p =400 s; parameter: t j 0 5 10 15 20 25 30 25 75 125 175 t c [c] p tot [w] 1 0.7 0.5 0.3 0.1 0 5 10 15 20 25 75 125 175 t c [c] i f [a] -55oc 25oc 100oc 150oc 175oc 0 2 4 6 01234 v f [v] i f [a] i f -55oc 25oc 100oc 150oc 175oc 0 5 10 15 20 25 0246810 v f [v] i f [a] i f rev. 2.0 page 3 2007-04-25
IDT03S60C 5 typ. capacitance charge vs. current slope 6 typ. reverse current vs. reverse voltage q c =f(d i f /d t ) 4) ; t j =150 c; i f i f,max i r =f( v r ) parameter: t j 7 transient thermal impedance 8 typ. capacitance vs. reverse voltage z thjc =f( t p ) c =f( v r ); t c =25 c, f =1 mhz parameter: d = t p / t 10 3 10 2 10 1 10 0 0 25 50 75 100 v r [v] c [pf] 0 0.02 0.05 0.1 0.2 0.5 10 -1 10 -2 10 -3 10 -4 10 -5 10 1 10 0 10 -1 10 -2 t p [s] z thjc [k/w] 25 c 100 c 150 c 175 c -55 c 10 -5 10 -6 10 -7 10 -8 10 -9 100 200 300 400 500 600 v r [v] i r [a] 0 1 2 3 4 5 6 100 400 700 1000 d i f /d t [a/s] q c [nc] rev. 2.0 page 4 2007-04-25
IDT03S60C 9 typ. c stored energy e c =f( v r ) 0.0 0.5 1.0 1.5 2.0 2.5 0 100 200 300 400 500 600 v r [v] e c [c] rev. 2.0 page 5 2007-04-25
IDT03S60C package outline:pg-to220-2-2 rev. 2.0 page 6 2007-04-25
IDT03S60C published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2006. a ll rights reserved. a ttention please! the information given in this data sheet shall in no event be r egarded as a guarantee of conditions o characteristics (beschaffenheitsgarantie). with respect to an y examples or hints given herein, any typica values stated herein and/or any information regarding the appli cation of the device, infineon technologie s hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third p arty information for further information on technology, delivery terms and condi tions and prices please contact your neares infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the type s in question please contact your nearest infineon technologies o ffice . infineon technologies components may only be used in life-suppo rt devices or systems with the expres s written approval of infineon technologies, if a failure of suc h components can reasonably be expected t o cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be impl anted in the human body, or to support and/o r maintain and sustain and/or protect human life. if they fail, i t is reasonable to assume that the health of th e user or other persons may be endangered . rev. 2.0 page 7 2007-04-25
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